The plasma source was an inductively coupled plasma-PECVD (ICP- PECVD)-type source composed of a 3.5-turn copper coil located above a dielectric plate, which forms top plate of the vacuum chamber. The gas mixtureofSiH 4 /NH 3 /ArwasfedfromthesideofthechamberwhereSiH 4 andNH 3 gaseswereusedasthereaction gasesandArgasastheignition gas. Total flow rate of (SiH 4 +NH 3 ) was maintained at 10 sccm and Ar flow rate was kept at 25 sccm. Dry pump was used to evacuate the chamber and the working pressure was maintained at 80 mTorr.100 W of 13.5 MHz rf power was fed to the coil antenna through a matching network and the substrate was biased at − 50 V using a separate 13.56 MHz rf power. The substrate temperature was maintained at the temperature lower than 80 °C using a chiller. As the substrates, various materials such as p-type Si b110N wafer, glass and PES were used

The plasma source was an inductively coupled plasma-PECVD (ICP- PECVD)-type source composed of a 3.5-turn copper coil located above a dielectric plate, which forms top plate of the vacuum chamber. The gas mixtureofSiH 4 /NH 3 /ArwasfedfromthesideofthechamberwhereSiH 4 andNH 3 gaseswereusedasthereaction gasesandArgasastheignition gas. Total flow rate of (SiH 4 +NH 3 ) was maintained at 10 sccm and Ar flow rate was kept at 25 sccm. Dry pump was used to evacuate the chamber and the working pressure was maintained at 80 mTorr.100 W of 13.5 MHz rf power was fed to the coil antenna through a matching network and the substrate was biased at − 50 V using a separate 13.56 MHz rf power. The substrate temperature was maintained at the temperature lower than 80 °C using a chiller. As the substrates, various materials such as p-type Si b110N wafer, glass and PES were used barrier deposited on the devices